zondag 13 mei 2012


Light emitting diodes made of indium gallium nitride held clues to the potential new solar cell material.

New Solar Cells

Researchers in Berkeley Lab's Materials Sciences Division (MSD), working with crystal-growing teams at Cornell University and Japan's Ritsumeikan University, have learned that the band gap of the semiconductor indium nitride is not 2 electron volts (eV) as previously thought, but instead is a much lower 0.7 eV.
The serendipitous discovery means that a single system of alloys incorporating indium, gallium, and nitrogen can convert virtually the full spectrum of sunlight-from the near infrared to the far ultraviolet-to electrical current. If solar cells can be made with this alloy, they promise to be rugged, relatively inexpensive-and the most efficient ever created.

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